Documentos Técnicos
Especificações
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
700 V
Package Type
TO-251
Mounting Type
Through Hole
Pin Count
3+Tab
Maximum Drain Source Resistance
900 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
68 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
2.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.8mm
Typical Gate Charge @ Vgs
18.4 nC @ 10 V
Height
7.17mm
Series
DMJ70H900HJ3
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Detalhes do produto
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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P.O.A.
5
P.O.A.
5
Documentos Técnicos
Especificações
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
700 V
Package Type
TO-251
Mounting Type
Through Hole
Pin Count
3+Tab
Maximum Drain Source Resistance
900 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
68 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
2.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.8mm
Typical Gate Charge @ Vgs
18.4 nC @ 10 V
Height
7.17mm
Series
DMJ70H900HJ3
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Detalhes do produto