Documentos Técnicos
Especificações
Automotive Standard
AEC-Q101
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Pin Count
3
Minimum Operating Temperature
-55 °C
Transistor Configuration
Single
Forward Diode Voltage
1.3V
Mounting Type
Through Hole
Series
AUIRF
Minimum Gate Threshold Voltage
3V
Maximum Operating Temperature
+175 °C
Maximum Drain Source Voltage
150 V
Maximum Gate Threshold Voltage
5V
Maximum Gate Source Voltage
±20 V
Package Type
TO-262
Height
4.83mm
Length
10.67mm
Width
9.65mm
Maximum Power Dissipation
375 W
Maximum Continuous Drain Current
99 A
Brand
InfineonMaximum Drain Source Resistance
12.1 mΩ
Typical Gate Charge @ Vgs
77 nC @ 10 V
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
P.O.A.
Padrão
5
P.O.A.
Padrão
5
Documentos Técnicos
Especificações
Automotive Standard
AEC-Q101
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Pin Count
3
Minimum Operating Temperature
-55 °C
Transistor Configuration
Single
Forward Diode Voltage
1.3V
Mounting Type
Through Hole
Series
AUIRF
Minimum Gate Threshold Voltage
3V
Maximum Operating Temperature
+175 °C
Maximum Drain Source Voltage
150 V
Maximum Gate Threshold Voltage
5V
Maximum Gate Source Voltage
±20 V
Package Type
TO-262
Height
4.83mm
Length
10.67mm
Width
9.65mm
Maximum Power Dissipation
375 W
Maximum Continuous Drain Current
99 A
Brand
InfineonMaximum Drain Source Resistance
12.1 mΩ
Typical Gate Charge @ Vgs
77 nC @ 10 V