Documentos Técnicos
Especificações
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10.3 A
Maximum Drain Source Voltage
600 V
Series
CoolMOS CE
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
11.3mm
Width
4.9mm
Typical Gate Charge @ Vgs
20.5 nC @ 10 V
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
0.9V
Height
16.27mm
País de Origem
China
Detalhes do produto
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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R$ 24,26
Each (In a Pack of 5) (Sem VAT)
Padrão
5
R$ 24,26
Each (In a Pack of 5) (Sem VAT)
Padrão
5
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Pacote |
---|---|---|
5 - 45 | R$ 24,26 | R$ 121,30 |
50 - 120 | R$ 21,90 | R$ 109,50 |
125 - 245 | R$ 20,70 | R$ 103,50 |
250 - 495 | R$ 19,56 | R$ 97,80 |
500+ | R$ 18,55 | R$ 92,75 |
Documentos Técnicos
Especificações
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10.3 A
Maximum Drain Source Voltage
600 V
Series
CoolMOS CE
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
11.3mm
Width
4.9mm
Typical Gate Charge @ Vgs
20.5 nC @ 10 V
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
0.9V
Height
16.27mm
País de Origem
China
Detalhes do produto
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.