N-Channel MOSFET, 72 A, 600 V, 4-Pin SOT-227 IXYS IXFN82N60P

Nº de Estoque RS: 194-130Marca: IXYSPart Number: IXFN82N60P
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Documentos Técnicos

Especificações

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

72 A

Maximum Drain Source Voltage

600 V

Series

HiperFET, Polar

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

1.04 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

240 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

38.2mm

Width

25.07mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.6mm

Detalhes do produto

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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R$ 762,82

Each (Sem VAT)

N-Channel MOSFET, 72 A, 600 V, 4-Pin SOT-227 IXYS IXFN82N60P

1

Disponível em múltiplos de 1
1R$ 762,82
2R$ 1.502,68
3R$ 2.254,02
4R$ 3.005,36
5R$ 3.735,25
6R$ 4.482,30
7R$ 5.229,35
8R$ 5.976,40
9R$ 6.723,45
10R$ 7.470,50
11R$ 8.217,55
12R$ 8.964,60
13R$ 9.711,65
14R$ 10.458,70
15R$ 11.205,75

R$ 762,82

Each (Sem VAT)

N-Channel MOSFET, 72 A, 600 V, 4-Pin SOT-227 IXYS IXFN82N60P
Informações de estoque temporariamente indisponíveis.

1

Disponível em múltiplos de 1
1R$ 762,82
2R$ 1.502,68
3R$ 2.254,02
4R$ 3.005,36
5R$ 3.735,25
6R$ 4.482,30
7R$ 5.229,35
8R$ 5.976,40
9R$ 6.723,45
10R$ 7.470,50
11R$ 8.217,55
12R$ 8.964,60
13R$ 9.711,65
14R$ 10.458,70
15R$ 11.205,75

Comprar em grandes quantidades

QuantidadePreço unitário
1 - 1R$ 762,82
2 - 4R$ 751,34
5+R$ 747,05

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

72 A

Maximum Drain Source Voltage

600 V

Series

HiperFET, Polar

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

1.04 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

240 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

38.2mm

Width

25.07mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.6mm

Detalhes do produto

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more