IXYS MII100-12A3 Series IGBT Module, 135 A 1200 V, 7-Pin Y4 M5, Panel Mount

Nº de Estoque RS: 168-4474Marca: IXYSPart Number: MII100-12A3
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Documentos Técnicos

Especificações

Brand

IXYS

Maximum Continuous Collector Current

135 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

Y4 M5

Configuration

Series

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

94 x 34 x 30mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Detalhes do produto

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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R$ 1.371,64

Each (In a Box of 6) (Sem VAT)

IXYS MII100-12A3 Series IGBT Module, 135 A 1200 V, 7-Pin Y4 M5, Panel Mount

6

Disponível em múltiplos de 6
6R$ 8.229,84
12R$ 16.459,68
18R$ 24.689,52
24R$ 32.919,36
30R$ 41.149,20
36R$ 49.379,04
42R$ 57.608,88
48R$ 65.838,72
54R$ 74.068,56
60R$ 82.298,40
66R$ 90.528,24
72R$ 98.758,08
78R$ 106.987,92
84R$ 115.217,76
90R$ 123.447,60

R$ 1.371,64

Each (In a Box of 6) (Sem VAT)

IXYS MII100-12A3 Series IGBT Module, 135 A 1200 V, 7-Pin Y4 M5, Panel Mount
Informações de estoque temporariamente indisponíveis.

6

Disponível em múltiplos de 6
6R$ 8.229,84
12R$ 16.459,68
18R$ 24.689,52
24R$ 32.919,36
30R$ 41.149,20
36R$ 49.379,04
42R$ 57.608,88
48R$ 65.838,72
54R$ 74.068,56
60R$ 82.298,40
66R$ 90.528,24
72R$ 98.758,08
78R$ 106.987,92
84R$ 115.217,76
90R$ 123.447,60

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Você pode estar interessado em

Documentos Técnicos

Especificações

Brand

IXYS

Maximum Continuous Collector Current

135 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

Y4 M5

Configuration

Series

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

94 x 34 x 30mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Detalhes do produto

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Você pode estar interessado em