Documentos Técnicos
Especificações
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Package Type
Power88
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Maximum Operating Temperature
+150 °C
Length
8mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Width
8mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
1.05mm
Minimum Operating Temperature
-55 °C
País de Origem
Philippines
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P.O.A.
Padrão
10
P.O.A.
Padrão
10
Documentos Técnicos
Especificações
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Package Type
Power88
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Maximum Operating Temperature
+150 °C
Length
8mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Width
8mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
1.05mm
Minimum Operating Temperature
-55 °C
País de Origem
Philippines