Documentos Técnicos
Especificações
Typical Fall Time
6µs
Typical Rise Time
6µs
Number of Channels
1
Maximum Light Current
>400µA
Maximum Dark Current
1 (≤ 50)nA
Angle of Half Sensitivity
±18 °
Polarity
NPN
Number of Pins
2
Mounting Type
Through Hole
Package Type
Miniature Array
Dimensions
2.2 x 2 x 3.45mm
Collector Current
50mA
Maximum Wavelength Detected
1100nm
Spectral Range of Sensitivity
450 → 1100 nm
Minimum Wavelength Detected
450nm
Width
2mm
Linearity
High
Height
3.45mm
Saturation Voltage
150mV
Series
BPX 81
Emitter Collector Voltage
7V
Collector Emitter Voltage
35V
Length
2.2mm
País de Origem
China
Detalhes do produto
Phototransistor Miniature Package
Phototransistors, OSRAM Opto Semiconductors
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
P.O.A.
1000
P.O.A.
1000
Documentos Técnicos
Especificações
Typical Fall Time
6µs
Typical Rise Time
6µs
Number of Channels
1
Maximum Light Current
>400µA
Maximum Dark Current
1 (≤ 50)nA
Angle of Half Sensitivity
±18 °
Polarity
NPN
Number of Pins
2
Mounting Type
Through Hole
Package Type
Miniature Array
Dimensions
2.2 x 2 x 3.45mm
Collector Current
50mA
Maximum Wavelength Detected
1100nm
Spectral Range of Sensitivity
450 → 1100 nm
Minimum Wavelength Detected
450nm
Width
2mm
Linearity
High
Height
3.45mm
Saturation Voltage
150mV
Series
BPX 81
Emitter Collector Voltage
7V
Collector Emitter Voltage
35V
Length
2.2mm
País de Origem
China
Detalhes do produto