ROHM RGT30NS65DGC9, P-Channel IGBT, 30 A 650 V, 3+Tab-Pin I2PAK, Through Hole

Nº de Estoque RS: 171-5593Marca: ROHMPart Number: RGT30NS65DGC9
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Documentos Técnicos

Especificações

Brand

ROHM

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Number of Transistors

1

Maximum Power Dissipation

133 W

Package Type

TO-262

Mounting Type

Through Hole

Channel Type

P

Pin Count

3+Tab

Transistor Configuration

Single

Dimensions

10.1 x 4.5 x 9mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

780pF

Maximum Operating Temperature

+175 °C

País de Origem

Japan

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R$ 41,78

Each (In a Pack of 5) (Sem VAT)

ROHM RGT30NS65DGC9, P-Channel IGBT, 30 A 650 V, 3+Tab-Pin I2PAK, Through Hole

5

Disponível em múltiplos de 5
5R$ 208,90
10R$ 417,80
15R$ 626,70
20R$ 835,60
25R$ 1.044,50
30R$ 1.253,40
35R$ 1.462,30
40R$ 1.671,20
45R$ 1.880,10
50R$ 1.905,00
55R$ 2.095,50
60R$ 2.286,00
65R$ 2.476,50
70R$ 2.667,00
75R$ 2.857,50

R$ 41,78

Each (In a Pack of 5) (Sem VAT)

ROHM RGT30NS65DGC9, P-Channel IGBT, 30 A 650 V, 3+Tab-Pin I2PAK, Through Hole
Informações de estoque temporariamente indisponíveis.

5

Disponível em múltiplos de 5
5R$ 208,90
10R$ 417,80
15R$ 626,70
20R$ 835,60
25R$ 1.044,50
30R$ 1.253,40
35R$ 1.462,30
40R$ 1.671,20
45R$ 1.880,10
50R$ 1.905,00
55R$ 2.095,50
60R$ 2.286,00
65R$ 2.476,50
70R$ 2.667,00
75R$ 2.857,50

Comprar em grandes quantidades

QuantidadePreço unitárioPer Pacote
5 - 45R$ 41,78R$ 208,90
50 - 95R$ 38,10R$ 190,50
100 - 245R$ 35,16R$ 175,80
250 - 495R$ 32,76R$ 163,80
500+R$ 30,72R$ 153,60

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

ROHM

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Number of Transistors

1

Maximum Power Dissipation

133 W

Package Type

TO-262

Mounting Type

Through Hole

Channel Type

P

Pin Count

3+Tab

Transistor Configuration

Single

Dimensions

10.1 x 4.5 x 9mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

780pF

Maximum Operating Temperature

+175 °C

País de Origem

Japan

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more