Documentos Técnicos
Especificações
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Transistor Material
Si
Pin Count
3
Maximum Gate Source Voltage
-30 V, +30 V
Minimum Operating Temperature
-55 °C
Transistor Configuration
Single
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
3V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
4.5V
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Width
4.6mm
Maximum Power Dissipation
35 W
Package Type
TO-220FP
Maximum Continuous Drain Current
10 A
Length
10.4mm
Height
9.3mm
Maximum Drain Source Resistance
750 mΩ
Brand
STMicroelectronicsTypical Gate Charge @ Vgs
50 nC @ 10 V
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
R$ 50,11
Each (In a Pack of 5) (Sem VAT)
Padrão
5
R$ 50,11
Each (In a Pack of 5) (Sem VAT)
Padrão
5
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Pacote |
---|---|---|
5 - 5 | R$ 50,11 | R$ 250,55 |
10 - 95 | R$ 43,16 | R$ 215,80 |
100 - 495 | R$ 34,13 | R$ 170,65 |
500 - 995 | R$ 29,44 | R$ 147,20 |
1000+ | R$ 24,86 | R$ 124,30 |
Documentos Técnicos
Especificações
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Transistor Material
Si
Pin Count
3
Maximum Gate Source Voltage
-30 V, +30 V
Minimum Operating Temperature
-55 °C
Transistor Configuration
Single
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
3V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
4.5V
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Width
4.6mm
Maximum Power Dissipation
35 W
Package Type
TO-220FP
Maximum Continuous Drain Current
10 A
Length
10.4mm
Height
9.3mm
Maximum Drain Source Resistance
750 mΩ
Brand
STMicroelectronicsTypical Gate Charge @ Vgs
50 nC @ 10 V