Documentos Técnicos
Especificações
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
14 nC @ 4.5 V
Width
5mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Detalhes do produto
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
R$ 16,34
Each (In a Pack of 5) (Sem VAT)
5
R$ 16,34
Each (In a Pack of 5) (Sem VAT)
5
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Pacote |
---|---|---|
5 - 45 | R$ 16,34 | R$ 81,70 |
50 - 95 | R$ 13,34 | R$ 66,70 |
100+ | R$ 10,34 | R$ 51,70 |
Documentos Técnicos
Especificações
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
14 nC @ 4.5 V
Width
5mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Detalhes do produto