Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.75 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
1 W
Maximum Gate Source Voltage
±20 V
Width
1.3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
0.39 nC @ 4.5 V
Height
0.9mm
Forward Diode Voltage
1.1V
País de Origem
Thailand
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R$ 0,38
Each (On a Reel of 3000) (Sem VAT)
3000
R$ 0,38
Each (On a Reel of 3000) (Sem VAT)
3000
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Bobina |
---|---|---|
3000 - 3000 | R$ 0,38 | R$ 1.140,00 |
6000 - 6000 | R$ 0,38 | R$ 1.140,00 |
9000+ | R$ 0,38 | R$ 1.140,00 |
Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.75 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
1 W
Maximum Gate Source Voltage
±20 V
Width
1.3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
0.39 nC @ 4.5 V
Height
0.9mm
Forward Diode Voltage
1.1V
País de Origem
Thailand