N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK Toshiba TK14G65W,RQ(S

Nº de Estoque RS: 133-2797Marca: ToshibaPart Number: TK14G65W,RQ(S
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Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

13.7 A

Maximum Drain Source Voltage

650 V

Series

DTMOSIV

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

8.8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.35mm

Typical Gate Charge @ Vgs

35 nC @ 10 V

Height

4.46mm

Forward Diode Voltage

1.7V

País de Origem

Japan

Detalhes do produto

MOSFET Transistors, Toshiba

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R$ 187,50

R$ 37,50 Each (In a Pack of 5) (Sem VAT)

N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK Toshiba TK14G65W,RQ(S

5

Disponível em múltiplos de 5
5R$ 187,50
10R$ 375,00
15R$ 562,50
20R$ 750,00
25R$ 826,50
30R$ 991,80
35R$ 1.157,10
40R$ 1.322,40
45R$ 1.487,70
50R$ 1.601,50
55R$ 1.761,65
60R$ 1.921,80
65R$ 2.081,95
70R$ 2.242,10
75R$ 2.402,25

R$ 187,50

R$ 37,50 Each (In a Pack of 5) (Sem VAT)

N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK Toshiba TK14G65W,RQ(S
Informações de estoque temporariamente indisponíveis.

5

Disponível em múltiplos de 5
5R$ 187,50
10R$ 375,00
15R$ 562,50
20R$ 750,00
25R$ 826,50
30R$ 991,80
35R$ 1.157,10
40R$ 1.322,40
45R$ 1.487,70
50R$ 1.601,50
55R$ 1.761,65
60R$ 1.921,80
65R$ 2.081,95
70R$ 2.242,10
75R$ 2.402,25

Comprar em grandes quantidades

QuantidadePreço unitárioPer Pacote
5 - 20R$ 37,50R$ 187,50
25 - 45R$ 33,06R$ 165,30
50 - 245R$ 32,03R$ 160,15
250 - 495R$ 31,19R$ 155,95
500+R$ 30,97R$ 154,85

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

13.7 A

Maximum Drain Source Voltage

650 V

Series

DTMOSIV

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

8.8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.35mm

Typical Gate Charge @ Vgs

35 nC @ 10 V

Height

4.46mm

Forward Diode Voltage

1.7V

País de Origem

Japan

Detalhes do produto

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more