N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 Toshiba TK20N60W5,S1VF(S

Nº de Estoque RS: 125-0551Marca: ToshibaPart Number: TK20N60W5,S1VF(S
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Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

175 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

165 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.02mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

15.94mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Height

20.95mm

Forward Diode Voltage

1.7V

País de Origem

Japan

Detalhes do produto

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

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R$ 268,15

R$ 53,63 Each (In a Pack of 5) (Sem VAT)

N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 Toshiba TK20N60W5,S1VF(S

R$ 268,15

R$ 53,63 Each (In a Pack of 5) (Sem VAT)

N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 Toshiba TK20N60W5,S1VF(S
Informações de estoque temporariamente indisponíveis.

Comprar em grandes quantidades

QuantidadePreço unitárioPer Pacote
5 - 20R$ 53,63R$ 268,15
25 - 45R$ 49,13R$ 245,65
50+R$ 45,52R$ 227,60

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

175 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

165 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.02mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

15.94mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Height

20.95mm

Forward Diode Voltage

1.7V

País de Origem

Japan

Detalhes do produto

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more