N-Channel MOSFET, 5.8 A, 650 V, 3-Pin DPAK Toshiba TK6P65W,RQ(S

Nº de Estoque RS: 133-2800Marca: ToshibaPart Number: TK6P65W,RQ(S
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Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

650 V

Series

DTMOSIV

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.05 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

6.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

11 nC @ 10 V

Height

2.3mm

Forward Diode Voltage

1.7V

País de Origem

Japan

Detalhes do produto

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

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R$ 115,40

R$ 11,54 Each (In a Pack of 10) (Sem VAT)

N-Channel MOSFET, 5.8 A, 650 V, 3-Pin DPAK Toshiba TK6P65W,RQ(S

10

Disponível em múltiplos de 10
10R$ 115,40
20R$ 230,80
30R$ 346,20
40R$ 461,60
50R$ 525,50
60R$ 630,60
70R$ 735,70
80R$ 840,80
90R$ 945,90
100R$ 1.038,00
110R$ 1.141,80
120R$ 1.245,60
130R$ 1.349,40
140R$ 1.453,20
150R$ 1.557,00

R$ 115,40

R$ 11,54 Each (In a Pack of 10) (Sem VAT)

N-Channel MOSFET, 5.8 A, 650 V, 3-Pin DPAK Toshiba TK6P65W,RQ(S
Informações de estoque temporariamente indisponíveis.

10

Disponível em múltiplos de 10
10R$ 115,40
20R$ 230,80
30R$ 346,20
40R$ 461,60
50R$ 525,50
60R$ 630,60
70R$ 735,70
80R$ 840,80
90R$ 945,90
100R$ 1.038,00
110R$ 1.141,80
120R$ 1.245,60
130R$ 1.349,40
140R$ 1.453,20
150R$ 1.557,00

Comprar em grandes quantidades

QuantidadePreço unitárioPer Pacote
10 - 40R$ 11,54R$ 115,40
50 - 90R$ 10,51R$ 105,10
100 - 490R$ 10,38R$ 103,80
500 - 990R$ 10,04R$ 100,40
1000+R$ 9,97R$ 99,70

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

650 V

Series

DTMOSIV

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.05 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

6.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

11 nC @ 10 V

Height

2.3mm

Forward Diode Voltage

1.7V

País de Origem

Japan

Detalhes do produto

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more