Documentos Técnicos
Especificações
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
14.2 A
Maximum Drain Source Voltage
100 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
4V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.15mm
Typical Gate Charge @ Vgs
8.5 nC @ 10 V
Width
3.15mm
Number of Elements per Chip
1
Height
1.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
País de Origem
China
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
R$ 15.840,00
R$ 5,28 Each (On a Reel of 3000) (Sem VAT)
3000
R$ 15.840,00
R$ 5,28 Each (On a Reel of 3000) (Sem VAT)
3000
Documentos Técnicos
Especificações
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
14.2 A
Maximum Drain Source Voltage
100 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
4V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.15mm
Typical Gate Charge @ Vgs
8.5 nC @ 10 V
Width
3.15mm
Number of Elements per Chip
1
Height
1.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
País de Origem
China