Documentos Técnicos
Especificações
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
49 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.55mm
País de Origem
China
Detalhes do produto
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
R$ 11,28
Each (In a Pack of 20) (Sem VAT)
Padrão
20
R$ 11,28
Each (In a Pack of 20) (Sem VAT)
Padrão
20
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Pacote |
---|---|---|
20 - 80 | R$ 11,28 | R$ 225,60 |
100 - 180 | R$ 9,18 | R$ 183,60 |
200 - 480 | R$ 8,82 | R$ 176,40 |
500 - 980 | R$ 8,50 | R$ 170,00 |
1000+ | R$ 8,15 | R$ 163,00 |
Documentos Técnicos
Especificações
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
49 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.55mm
País de Origem
China
Detalhes do produto