Documentos Técnicos
Especificações
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
9.3 A, 9.6 A
Maximum Drain Source Voltage
35 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
8.9 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
2
Length
6.7mm
Typical Gate Charge @ Vgs
18.7 nC @ 10 V, 19.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.39mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Detalhes do produto
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
R$ 216,80
R$ 10,84 Each (In a Pack of 20) (Sem VAT)
Padrão
20
R$ 216,80
R$ 10,84 Each (In a Pack of 20) (Sem VAT)
Padrão
20
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Quantidade | Preço unitário | Per Pacote |
---|---|---|
20 - 80 | R$ 10,84 | R$ 216,80 |
100 - 480 | R$ 7,08 | R$ 141,60 |
500 - 980 | R$ 6,48 | R$ 129,60 |
1000+ | R$ 5,86 | R$ 117,20 |
Documentos Técnicos
Especificações
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
9.3 A, 9.6 A
Maximum Drain Source Voltage
35 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
8.9 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
2
Length
6.7mm
Typical Gate Charge @ Vgs
18.7 nC @ 10 V, 19.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.39mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Detalhes do produto