Diodes Inc N-Channel MOSFET, 1.3 A, 20 V, 3-Pin X2-DFN1006 DMN2300UFB4-7B

Nº de Estoque RS: 770-5128Marca: DiodesZetexPart Number: DMN2300UFB4-7B
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Especificações

Channel Type

N

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

20 V

Package Type

X2-DFN1006

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.95V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

0.65mm

Transistor Material

Si

Number of Elements per Chip

1

Length

1.05mm

Typical Gate Charge @ Vgs

1.6 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

0.35mm

Minimum Operating Temperature

-55 °C

País de Origem

China

Detalhes do produto

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Informações de estoque temporariamente indisponíveis.

R$ 140,50

R$ 2,81 Each (In a Pack of 50) (Sem VAT)

Diodes Inc N-Channel MOSFET, 1.3 A, 20 V, 3-Pin X2-DFN1006 DMN2300UFB4-7B
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R$ 140,50

R$ 2,81 Each (In a Pack of 50) (Sem VAT)

Diodes Inc N-Channel MOSFET, 1.3 A, 20 V, 3-Pin X2-DFN1006 DMN2300UFB4-7B
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

20 V

Package Type

X2-DFN1006

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.95V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

0.65mm

Transistor Material

Si

Number of Elements per Chip

1

Length

1.05mm

Typical Gate Charge @ Vgs

1.6 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

0.35mm

Minimum Operating Temperature

-55 °C

País de Origem

China

Detalhes do produto

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more