Diodes Inc P-Channel MOSFET, 10.4 A, 60 V, 3-Pin DPAK ZXMP6A18KTC

Nº de Estoque RS: 922-8204Marca: DiodesZetexPart Number: ZXMP6A18KTC
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Documentos Técnicos

Especificações

Channel Type

P

Maximum Continuous Drain Current

10.4 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

10.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

7.67mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

23 nC @ 5 V

Maximum Operating Temperature

+150 °C

Height

2.39mm

Minimum Operating Temperature

-55 °C

País de Origem

China

Detalhes do produto

P-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Informações de estoque temporariamente indisponíveis.

R$ 35.550,00

R$ 14,22 Each (On a Reel of 2500) (Sem VAT)

Diodes Inc P-Channel MOSFET, 10.4 A, 60 V, 3-Pin DPAK ZXMP6A18KTC

R$ 35.550,00

R$ 14,22 Each (On a Reel of 2500) (Sem VAT)

Diodes Inc P-Channel MOSFET, 10.4 A, 60 V, 3-Pin DPAK ZXMP6A18KTC
Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

P

Maximum Continuous Drain Current

10.4 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

10.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

7.67mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

23 nC @ 5 V

Maximum Operating Temperature

+150 °C

Height

2.39mm

Minimum Operating Temperature

-55 °C

País de Origem

China

Detalhes do produto

P-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more