Documentos Técnicos
Especificações
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Series
SIPMOS®
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
6.73mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
6.22mm
Transistor Material
Si
Forward Diode Voltage
1.7V
Height
2.41mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
R$ 223,90
R$ 22,39 Each (In a Pack of 10) (Sem VAT)
Padrão
10
R$ 223,90
R$ 22,39 Each (In a Pack of 10) (Sem VAT)
Padrão
10
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Quantidade | Preço unitário | Per Pacote |
---|---|---|
10 - 40 | R$ 22,39 | R$ 223,90 |
50 - 240 | R$ 21,60 | R$ 216,00 |
250 - 490 | R$ 18,17 | R$ 181,70 |
500 - 1240 | R$ 16,13 | R$ 161,30 |
1250+ | R$ 13,02 | R$ 130,20 |
Documentos Técnicos
Especificações
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Series
SIPMOS®
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
6.73mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
6.22mm
Transistor Material
Si
Forward Diode Voltage
1.7V
Height
2.41mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.