Documentos Técnicos
Especificações
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
150 V
Series
HiperFET, Polar
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
680 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
240 nC @ 10 V
Width
25.42mm
Transistor Material
Si
Number of Elements per Chip
1
Length
38.23mm
Maximum Operating Temperature
+175 °C
Height
9.6mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
R$ 587,94
R$ 587,94 Each (Sem VAT)
Padrão
1
R$ 587,94
R$ 587,94 Each (Sem VAT)
Padrão
1
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Quantidade | Preço unitário |
---|---|
1 - 4 | R$ 587,94 |
5+ | R$ 536,78 |
Documentos Técnicos
Especificações
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
150 V
Series
HiperFET, Polar
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
680 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
240 nC @ 10 V
Width
25.42mm
Transistor Material
Si
Number of Elements per Chip
1
Length
38.23mm
Maximum Operating Temperature
+175 °C
Height
9.6mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS