onsemi N-Channel MOSFET, 3.2 A, 20 V, 3-Pin SOT-23 NTR4501NT1G

Nº de Estoque RS: 688-9146Marca: onsemiPart Number: NTR4501NT1G
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Especificações

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

3.2 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

2.4 nC @ 4.5 V

Width

1.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.9mm

Maximum Operating Temperature

+150 °C

Height

0.94mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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R$ 15,92

R$ 7,96 Each (In a Pack of 2) (Sem VAT)

onsemi N-Channel MOSFET, 3.2 A, 20 V, 3-Pin SOT-23 NTR4501NT1G
Selecione o tipo de embalagem

R$ 15,92

R$ 7,96 Each (In a Pack of 2) (Sem VAT)

onsemi N-Channel MOSFET, 3.2 A, 20 V, 3-Pin SOT-23 NTR4501NT1G
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

QuantidadePreço unitárioPer Pacote
2 - 58R$ 7,96R$ 15,92
60 - 118R$ 7,60R$ 15,20
120 - 198R$ 6,59R$ 13,18
200 - 498R$ 6,29R$ 12,58
500+R$ 6,16R$ 12,32

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
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Documentos Técnicos

Especificações

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

3.2 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

2.4 nC @ 4.5 V

Width

1.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.9mm

Maximum Operating Temperature

+150 °C

Height

0.94mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
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