Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
60 V
Series
STripFET F7
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.4mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
0.95mm
Forward Diode Voltage
1.2V
País de Origem
China
Detalhes do produto
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
R$ 248,40
R$ 24,84 Each (In a Pack of 10) (Sem VAT)
Padrão
10
R$ 248,40
R$ 24,84 Each (In a Pack of 10) (Sem VAT)
Padrão
10
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Quantidade | Preço unitário | Per Pacote |
---|---|---|
10 - 10 | R$ 24,84 | R$ 248,40 |
20+ | R$ 24,00 | R$ 240,00 |
Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
60 V
Series
STripFET F7
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.4mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
0.95mm
Forward Diode Voltage
1.2V
País de Origem
China
Detalhes do produto
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.