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STMicroelectronics P-Channel MOSFET, 2 A, 30 V, 3-Pin SOT-23 STR2P3LLH6

Nº de Estoque RS: 876-5702PMarca: STMicroelectronicsPart Number: STR2P3LLH6
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Documentos Técnicos

Especificações

Channel Type

P

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

30 V

Series

STripFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.75mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

6 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.3mm

Forward Diode Voltage

1.1V

País de Origem

China

Detalhes do produto

P-Channel STripFET™ Power MOSFET, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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STMicroelectronics P-Channel MOSFET, 2 A, 30 V, 3-Pin SOT-23 STR2P3LLH6
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P.O.A.

Each (Supplied on a Reel) (Sem VAT)

STMicroelectronics P-Channel MOSFET, 2 A, 30 V, 3-Pin SOT-23 STR2P3LLH6
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Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

P

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

30 V

Series

STripFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.75mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

6 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.3mm

Forward Diode Voltage

1.1V

País de Origem

China

Detalhes do produto

P-Channel STripFET™ Power MOSFET, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more