Texas Instruments NexFET N-Channel MOSFET, 60 A, 25 V, 8-Pin SON CSD16340Q3

Nº de Estoque RS: 162-8530Marca: Texas InstrumentsPart Number: CSD16340Q3
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

25 V

Series

NexFET

Package Type

SON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Length

3.4mm

Typical Gate Charge @ Vgs

6.5 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

3.4mm

Height

1.1mm

Minimum Operating Temperature

-55 °C

País de Origem

Malaysia

Detalhes do produto

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Informações de estoque temporariamente indisponíveis.

P.O.A.

Each (On a Reel of 2500) (Sem VAT)

Texas Instruments NexFET N-Channel MOSFET, 60 A, 25 V, 8-Pin SON CSD16340Q3

P.O.A.

Each (On a Reel of 2500) (Sem VAT)

Texas Instruments NexFET N-Channel MOSFET, 60 A, 25 V, 8-Pin SON CSD16340Q3
Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

25 V

Series

NexFET

Package Type

SON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Length

3.4mm

Typical Gate Charge @ Vgs

6.5 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

3.4mm

Height

1.1mm

Minimum Operating Temperature

-55 °C

País de Origem

Malaysia

Detalhes do produto

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more