Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
165 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.94mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.95mm
Forward Diode Voltage
1.7V
País de Origem
China
Detalhes do produto
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
R$ 85,04
R$ 42,52 Each (In a Pack of 2) (Sem VAT)
2
R$ 85,04
R$ 42,52 Each (In a Pack of 2) (Sem VAT)
2
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Quantidade | Preço unitário | Per Pacote |
---|---|---|
2 - 8 | R$ 42,52 | R$ 85,04 |
10 - 38 | R$ 37,99 | R$ 75,98 |
40 - 98 | R$ 33,77 | R$ 67,54 |
100 - 198 | R$ 32,03 | R$ 64,06 |
200+ | R$ 30,70 | R$ 61,40 |
Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
165 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.94mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.95mm
Forward Diode Voltage
1.7V
País de Origem
China
Detalhes do produto