Toshiba TK N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 TK20N60W,S1VF(S

Nº de Estoque RS: 891-2945Marca: ToshibaPart Number: TK20N60W,S1VF(S
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Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

155 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

165 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.02mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.94mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

20.95mm

Forward Diode Voltage

1.7V

País de Origem

China

Detalhes do produto

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

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Informações de estoque temporariamente indisponíveis.

R$ 85,04

R$ 42,52 Each (In a Pack of 2) (Sem VAT)

Toshiba TK N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 TK20N60W,S1VF(S

R$ 85,04

R$ 42,52 Each (In a Pack of 2) (Sem VAT)

Toshiba TK N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 TK20N60W,S1VF(S
Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

QuantidadePreço unitárioPer Pacote
2 - 8R$ 42,52R$ 85,04
10 - 38R$ 37,99R$ 75,98
40 - 98R$ 33,77R$ 67,54
100 - 198R$ 32,03R$ 64,06
200+R$ 30,70R$ 61,40

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

155 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

165 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.02mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.94mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

20.95mm

Forward Diode Voltage

1.7V

País de Origem

China

Detalhes do produto

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more