Toshiba TK N-Channel MOSFET, 40 A, 40 V, 3-Pin DP TK40P04M1(T6RSS-Q)

Nº de Estoque RS: 695-5928Marca: ToshibaPart Number: TK40P04M1(T6RSS-Q)
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Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

40 V

Series

TK

Package Type

DP

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

47 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

15 nC @ 5 V, 29 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

2.3mm

Minimum Operating Temperature

-55 °C

País de Origem

Japan

Detalhes do produto

MOSFET Transistors, Toshiba

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Informações de estoque temporariamente indisponíveis.

R$ 47,50

R$ 9,50 Each (In a Pack of 5) (Sem VAT)

Toshiba TK N-Channel MOSFET, 40 A, 40 V, 3-Pin DP TK40P04M1(T6RSS-Q)

R$ 47,50

R$ 9,50 Each (In a Pack of 5) (Sem VAT)

Toshiba TK N-Channel MOSFET, 40 A, 40 V, 3-Pin DP TK40P04M1(T6RSS-Q)
Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

40 V

Series

TK

Package Type

DP

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

47 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

15 nC @ 5 V, 29 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

2.3mm

Minimum Operating Temperature

-55 °C

País de Origem

Japan

Detalhes do produto

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more