Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.1 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
24 nC @ 10 V
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.8mm
País de Origem
China
Detalhes do produto
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
P.O.A.
Each (Supplied in a Tube) (Sem VAT)
Embalagem de Produção (Tubo)
5
P.O.A.
Each (Supplied in a Tube) (Sem VAT)
Embalagem de Produção (Tubo)
5
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.1 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
24 nC @ 10 V
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.8mm
País de Origem
China
Detalhes do produto