Documentos Técnicos
Especificações
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.3 A, 6 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
65 mΩ, 140 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.78 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
6 nC @ 10 V, 7.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1.5mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
R$ 212,40
R$ 10,62 Each (In a Pack of 20) (Sem VAT)
Padrão
20
R$ 212,40
R$ 10,62 Each (In a Pack of 20) (Sem VAT)
Padrão
20
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Quantidade | Preço unitário | Per Pacote |
---|---|---|
20 - 180 | R$ 10,62 | R$ 212,40 |
200 - 480 | R$ 9,18 | R$ 183,60 |
500 - 980 | R$ 8,77 | R$ 175,40 |
1000 - 1980 | R$ 8,36 | R$ 167,20 |
2000+ | R$ 7,87 | R$ 157,40 |
Documentos Técnicos
Especificações
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.3 A, 6 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
65 mΩ, 140 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.78 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
6 nC @ 10 V, 7.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1.5mm
Minimum Operating Temperature
-55 °C
Detalhes do produto