Vishay Dual N-Channel MOSFET, 20 A, 40 V, 8-Pin PowerPAK SO-8 SI7288DP-T1-GE3

Nº de Estoque RS: 818-1390Marca: VishayPart Number: SI7288DP-T1-GE3
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

40 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

22 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

15.6 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Transistor Material

Si

Length

5.99mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Height

1.07mm

Minimum Operating Temperature

-55 °C

País de Origem

China

Detalhes do produto

Dual N-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Informações de estoque temporariamente indisponíveis.

R$ 217,60

R$ 21,76 Each (In a Pack of 10) (Sem VAT)

Vishay Dual N-Channel MOSFET, 20 A, 40 V, 8-Pin PowerPAK SO-8 SI7288DP-T1-GE3
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R$ 217,60

R$ 21,76 Each (In a Pack of 10) (Sem VAT)

Vishay Dual N-Channel MOSFET, 20 A, 40 V, 8-Pin PowerPAK SO-8 SI7288DP-T1-GE3
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

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Verifique novamente mais tarde.

QuantidadePreço unitárioPer Pacote
10 - 90R$ 21,76R$ 217,60
100 - 240R$ 21,00R$ 210,00
250 - 490R$ 17,92R$ 179,20
500 - 990R$ 17,08R$ 170,80
1000+R$ 16,15R$ 161,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

40 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

22 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

15.6 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Transistor Material

Si

Length

5.99mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Height

1.07mm

Minimum Operating Temperature

-55 °C

País de Origem

China

Detalhes do produto

Dual N-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more