Vishay P-Channel MOSFET, 4.3 A, 20 V, 4-Pin MICRO FOOT SI8489EDB-T2-E1

Nº de Estoque RS: 818-1438PMarca: VishayPart Number: SI8489EDB-T2-E1
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.3 A

Maximum Drain Source Voltage

20 V

Package Type

MICRO FOOT

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

1mm

Typical Gate Charge @ Vgs

17.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.268mm

Minimum Operating Temperature

-55 °C

País de Origem

China

Detalhes do produto

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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P.O.A.

Each (Supplied on a Reel) (Sem VAT)

Vishay P-Channel MOSFET, 4.3 A, 20 V, 4-Pin MICRO FOOT SI8489EDB-T2-E1
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P.O.A.

Each (Supplied on a Reel) (Sem VAT)

Vishay P-Channel MOSFET, 4.3 A, 20 V, 4-Pin MICRO FOOT SI8489EDB-T2-E1

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.3 A

Maximum Drain Source Voltage

20 V

Package Type

MICRO FOOT

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

1mm

Typical Gate Charge @ Vgs

17.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.268mm

Minimum Operating Temperature

-55 °C

País de Origem

China

Detalhes do produto

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more