Vishay Dual N/P-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 SIA517DJ-T1-GE3
Documentos Técnicos
Especificações
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.3 A, 4.5 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
65 mΩ, 170 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
6.5 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Width
2.15mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.15mm
Typical Gate Charge @ Vgs
13.1 nC @ 8 V, 9.7 nC @ 8 V
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
País de Origem
China
Detalhes do produto
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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R$ 190,00
R$ 9,50 Each (In a Pack of 20) (Sem VAT)
Padrão
20
R$ 190,00
R$ 9,50 Each (In a Pack of 20) (Sem VAT)
Padrão
20
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 20 - 180 | R$ 9,50 | R$ 190,00 |
| 200 - 480 | R$ 8,52 | R$ 170,40 |
| 500 - 980 | R$ 7,25 | R$ 145,00 |
| 1000 - 1980 | R$ 6,97 | R$ 139,40 |
| 2000+ | R$ 6,02 | R$ 120,40 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.3 A, 4.5 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
65 mΩ, 170 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
6.5 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Width
2.15mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.15mm
Typical Gate Charge @ Vgs
13.1 nC @ 8 V, 9.7 nC @ 8 V
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
País de Origem
China
Detalhes do produto
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products