Documentos Técnicos
Especificações
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
40 V
Series
SQ Rugged
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
7.14 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
74 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.55mm
Minimum Operating Temperature
-55 °C
País de Origem
China
Detalhes do produto
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
R$ 430,10
R$ 43,01 Each (In a Pack of 10) (Sem VAT)
Padrão
10
R$ 430,10
R$ 43,01 Each (In a Pack of 10) (Sem VAT)
Padrão
10
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Quantidade | Preço unitário | Per Pacote |
---|---|---|
10 - 40 | R$ 43,01 | R$ 430,10 |
50 - 90 | R$ 34,94 | R$ 349,40 |
100 - 240 | R$ 31,04 | R$ 310,40 |
250 - 490 | R$ 29,22 | R$ 292,20 |
500+ | R$ 24,65 | R$ 246,50 |
Documentos Técnicos
Especificações
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
40 V
Series
SQ Rugged
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
7.14 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
74 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.55mm
Minimum Operating Temperature
-55 °C
País de Origem
China
Detalhes do produto