Documentos Técnicos
Especificações
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
310 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
540 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
0.87 nC @ 10 V
Number of Elements per Chip
1
Transistor Material
Si
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.1mm
Detalhes do produto
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
P.O.A.
Embalagem de Produção (Bobina)
200
P.O.A.
Embalagem de Produção (Bobina)
200
Documentos Técnicos
Especificações
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
310 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
540 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
0.87 nC @ 10 V
Number of Elements per Chip
1
Transistor Material
Si
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.1mm
Detalhes do produto