Documentos Técnicos
Especificações
Brand
InfineonTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-30 V
Package Type
SOT-143
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
420
Transistor Configuration
Current Mirror
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
250 MHz
Pin Count
4
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Dimensions
2.9 x 1.3 x 0.9mm
Detalhes do produto
General Purpose PNP Transistors, Infineon
Bipolar Transistors, Infineon
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
P.O.A.
250
P.O.A.
250
Documentos Técnicos
Especificações
Brand
InfineonTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-30 V
Package Type
SOT-143
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
420
Transistor Configuration
Current Mirror
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
250 MHz
Pin Count
4
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Dimensions
2.9 x 1.3 x 0.9mm
Detalhes do produto