Documentos Técnicos
Especificações
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
80 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
114 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.35mm
Typical Gate Charge @ Vgs
42 nC @ 10 V
Height
1.1mm
Series
OptiMOS 3
Minimum Operating Temperature
-55 °C
País de Origem
Singapore
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
P.O.A.
5000
P.O.A.
5000
Documentos Técnicos
Especificações
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
80 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
114 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.35mm
Typical Gate Charge @ Vgs
42 nC @ 10 V
Height
1.1mm
Series
OptiMOS 3
Minimum Operating Temperature
-55 °C
País de Origem
Singapore