Infineon SIPMOS® P-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-223 BSP170PH6327XTSA1
Documentos Técnicos
Especificações
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
60 V
Series
SIPMOS®
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.6mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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R$ 704,00
R$ 14,08 Each (In a Pack of 50) (Sem VAT)
Padrão
50
R$ 704,00
R$ 14,08 Each (In a Pack of 50) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
50
Informações de estoque temporariamente indisponíveis.
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 50 - 50 | R$ 14,08 | R$ 704,00 |
| 100 - 200 | R$ 10,60 | R$ 530,00 |
| 250 - 450 | R$ 10,02 | R$ 501,00 |
| 500 - 1200 | R$ 9,42 | R$ 471,00 |
| 1250+ | R$ 8,99 | R$ 449,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
60 V
Series
SIPMOS®
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.6mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products