Documentos Técnicos
Especificações
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
176 A
Maximum Drain Source Voltage
100 V
Series
IPB020N10N5
Package Type
TO 263
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
11.05mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.31mm
Typical Gate Charge @ Vgs
168 nC @ 10 V
Height
4.57mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
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R$ 108,83
Each (In a Pack of 5) (Sem VAT)
Padrão
5
R$ 108,83
Each (In a Pack of 5) (Sem VAT)
Padrão
5
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Pacote |
---|---|---|
5 - 20 | R$ 108,83 | R$ 544,15 |
25 - 95 | R$ 94,02 | R$ 470,10 |
100 - 245 | R$ 82,66 | R$ 413,30 |
250 - 495 | R$ 79,52 | R$ 397,60 |
500+ | R$ 72,34 | R$ 361,70 |
Documentos Técnicos
Especificações
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
176 A
Maximum Drain Source Voltage
100 V
Series
IPB020N10N5
Package Type
TO 263
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
11.05mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.31mm
Typical Gate Charge @ Vgs
168 nC @ 10 V
Height
4.57mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V