Infineon OptiMOS™ -T2 N-Channel MOSFET, 120 A, 80 V, 3-Pin D2PAK IPB120N08S403ATMA1

Nº de Estoque RS: 214-4366Marca: InfineonPart Number: IPB120N08S403ATMA1
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Especificações

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

80 V

Package Type

D2PAK (TO-263)

Series

OptiMOS™ -T2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0025 Ω

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

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R$ 524,30

R$ 104,86 Each (In a Pack of 5) (Sem VAT)

Infineon OptiMOS™ -T2 N-Channel MOSFET, 120 A, 80 V, 3-Pin D2PAK IPB120N08S403ATMA1
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R$ 524,30

R$ 104,86 Each (In a Pack of 5) (Sem VAT)

Infineon OptiMOS™ -T2 N-Channel MOSFET, 120 A, 80 V, 3-Pin D2PAK IPB120N08S403ATMA1
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

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QuantidadePreço unitárioPer Pacote
5 - 5R$ 104,86R$ 524,30
10 - 20R$ 95,82R$ 479,10
25 - 45R$ 90,78R$ 453,90
50 - 120R$ 85,55R$ 427,75
125+R$ 81,24R$ 406,20

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

80 V

Package Type

D2PAK (TO-263)

Series

OptiMOS™ -T2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0025 Ω

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more