Infineon CoolMOS™ C7 N-Channel MOSFET, 46 A, 700 V, 4-Pin TO-247-4 IPZ65R045C7XKSA1

Nº de Estoque RS: 897-7664Marca: InfineonPart Number: IPZ65R045C7XKSA1
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Especificações

Channel Type

N

Maximum Continuous Drain Current

46 A

Maximum Drain Source Voltage

700 V

Series

CoolMOS™ C7

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

227 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

16.13mm

Typical Gate Charge @ Vgs

93 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

21.1mm

Transistor Material

Si

Height

5.21mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Detalhes do produto

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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R$ 170,69

R$ 170,69 Each (Sem VAT)

Infineon CoolMOS™ C7 N-Channel MOSFET, 46 A, 700 V, 4-Pin TO-247-4 IPZ65R045C7XKSA1
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R$ 170,69

R$ 170,69 Each (Sem VAT)

Infineon CoolMOS™ C7 N-Channel MOSFET, 46 A, 700 V, 4-Pin TO-247-4 IPZ65R045C7XKSA1
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QuantidadePreço unitário
1 - 4R$ 170,69
5 - 9R$ 164,64
10 - 24R$ 163,63
25 - 49R$ 155,27
50+R$ 146,83

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

46 A

Maximum Drain Source Voltage

700 V

Series

CoolMOS™ C7

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

227 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

16.13mm

Typical Gate Charge @ Vgs

93 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

21.1mm

Transistor Material

Si

Height

5.21mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Detalhes do produto

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more