Documentos Técnicos
Especificações
Brand
NexperiaTransistor Type
NPN
Maximum Continuous Collector Current
1 A
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
5 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3 + Tab
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
1.9 V
Maximum Collector Base Voltage
80 V
Maximum Collector Emitter Saturation Voltage
1.3 V
Maximum Collector Cut-off Current
0.00005mA
Height
1.7mm
Width
3.7mm
Dimensions
6.7 x 3.7 x 1.7mm
Maximum Power Dissipation
1.25 W
Minimum Operating Temperature
-65 °C
Maximum Operating Temperature
+150 °C
Length
6.7mm
País de Origem
China
Detalhes do produto
Darlington Transistors, Nexperia
Bipolar Transistors, Nexperia
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
P.O.A.
Embalagem de Produção (Bobina)
10
P.O.A.
Embalagem de Produção (Bobina)
10
Documentos Técnicos
Especificações
Brand
NexperiaTransistor Type
NPN
Maximum Continuous Collector Current
1 A
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
5 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3 + Tab
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
1.9 V
Maximum Collector Base Voltage
80 V
Maximum Collector Emitter Saturation Voltage
1.3 V
Maximum Collector Cut-off Current
0.00005mA
Height
1.7mm
Width
3.7mm
Dimensions
6.7 x 3.7 x 1.7mm
Maximum Power Dissipation
1.25 W
Minimum Operating Temperature
-65 °C
Maximum Operating Temperature
+150 °C
Length
6.7mm
País de Origem
China
Detalhes do produto