ON Semiconductor, FJP2145TU, Emmitter Switched, NPN Power Transistor 5 A 0.202V, 3-Pin TO-220

Nº de Estoque RS: 864-8956Marca: ON SemiconductorPart Number: FJP2145TU
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Documentos Técnicos

Especificações

Transistor Type

NPN

Maximum DC Collector Current

5 A

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

120 W

Minimum DC Current Gain

8

Pin Count

3

Minimum Operating Temperature

-55 °C

Dimensions

10.67 x 4.83 x 16.51mm

Maximum Operating Temperature

+125 °C

Detalhes do produto

ESBC™ Power Transistor, Fairchild Semiconductor

Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.

Bipolar Transistors, Fairchild Semiconductor

Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.

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Informações de estoque temporariamente indisponíveis.

P.O.A.

Each (In a Pack of 10) (Sem VAT)

ON Semiconductor, FJP2145TU, Emmitter Switched, NPN Power Transistor 5 A 0.202V, 3-Pin TO-220

P.O.A.

Each (In a Pack of 10) (Sem VAT)

ON Semiconductor, FJP2145TU, Emmitter Switched, NPN Power Transistor 5 A 0.202V, 3-Pin TO-220
Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Você pode estar interessado em

Documentos Técnicos

Especificações

Transistor Type

NPN

Maximum DC Collector Current

5 A

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

120 W

Minimum DC Current Gain

8

Pin Count

3

Minimum Operating Temperature

-55 °C

Dimensions

10.67 x 4.83 x 16.51mm

Maximum Operating Temperature

+125 °C

Detalhes do produto

ESBC™ Power Transistor, Fairchild Semiconductor

Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.

Bipolar Transistors, Fairchild Semiconductor

Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Você pode estar interessado em