Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
710 V
Series
MDmesh M5
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
340 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
4.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.4mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Height
16.4mm
País de Origem
China
Detalhes do produto
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
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R$ 1.718,50
R$ 34,37 Each (In a Tube of 50) (Sem VAT)
50
R$ 1.718,50
R$ 34,37 Each (In a Tube of 50) (Sem VAT)
50
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Tubo |
---|---|---|
50 - 50 | R$ 34,37 | R$ 1.718,50 |
100 - 200 | R$ 33,96 | R$ 1.698,00 |
250 - 450 | R$ 33,58 | R$ 1.679,00 |
500 - 700 | R$ 33,20 | R$ 1.660,00 |
750+ | R$ 32,87 | R$ 1.643,50 |
Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
710 V
Series
MDmesh M5
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
340 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
4.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.4mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Height
16.4mm
País de Origem
China
Detalhes do produto
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.