N-Channel MOSFET, 21 A, 650 V, 3-Pin TO-220FP STMicroelectronics STF28N60DM2

Nº de Estoque RS: 168-5889Marca: STMicroelectronicsPart Number: STF28N60DM2
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

650 V

Series

MDmesh DM2

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

160 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

4.6mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.4mm

Typical Gate Charge @ Vgs

34 nC @ 10 V

Height

16.4mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

País de Origem

China

Detalhes do produto

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

MOSFET Transistors, STMicroelectronics

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P.O.A.

N-Channel MOSFET, 21 A, 650 V, 3-Pin TO-220FP STMicroelectronics STF28N60DM2

P.O.A.

N-Channel MOSFET, 21 A, 650 V, 3-Pin TO-220FP STMicroelectronics STF28N60DM2
Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

650 V

Series

MDmesh DM2

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

160 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

4.6mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.4mm

Typical Gate Charge @ Vgs

34 nC @ 10 V

Height

16.4mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

País de Origem

China

Detalhes do produto

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more