Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
900 V
Package Type
TO-220FP
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.4mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
22.7 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Height
16.4mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
R$ 60,60
R$ 12,12 Each (In a Pack of 5) (Sem VAT)
Padrão
5
R$ 60,60
R$ 12,12 Each (In a Pack of 5) (Sem VAT)
Padrão
5
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Quantidade | Preço unitário | Per Pacote |
---|---|---|
5 - 5 | R$ 12,12 | R$ 60,60 |
10 - 95 | R$ 10,38 | R$ 51,90 |
100 - 495 | R$ 8,86 | R$ 44,30 |
500 - 995 | R$ 8,71 | R$ 43,55 |
1000+ | R$ 8,66 | R$ 43,30 |
Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
900 V
Package Type
TO-220FP
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.4mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
22.7 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Height
16.4mm
Minimum Operating Temperature
-55 °C
Detalhes do produto