N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-247 STMicroelectronics STW35N60DM2

Nº de Estoque RS: 111-6482PMarca: STMicroelectronicsPart Number: STW35N60DM2
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

28 A

Maximum Drain Source Voltage

600 V

Series

MDmesh DM2

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

210 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.75mm

Typical Gate Charge @ Vgs

54 nC @ 10 V

Width

5.15mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Height

20.15mm

País de Origem

China

Detalhes do produto

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

MOSFET Transistors, STMicroelectronics

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N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-247 STMicroelectronics STW35N60DM2
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N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-247 STMicroelectronics STW35N60DM2
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

28 A

Maximum Drain Source Voltage

600 V

Series

MDmesh DM2

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

210 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.75mm

Typical Gate Charge @ Vgs

54 nC @ 10 V

Width

5.15mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Height

20.15mm

País de Origem

China

Detalhes do produto

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more