Documentos Técnicos
Especificações
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Length
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Height
16.51mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
País de Origem
Philippines
Detalhes do produto
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
R$ 12.879,50
R$ 257,59 Each (In a Tube of 50) (Sem VAT)
50
R$ 12.879,50
R$ 257,59 Each (In a Tube of 50) (Sem VAT)
50
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Quantidade | Preço unitário | Per Tubo |
---|---|---|
50 - 50 | R$ 257,59 | R$ 12.879,50 |
100 - 200 | R$ 235,58 | R$ 11.779,00 |
250 - 450 | R$ 225,46 | R$ 11.273,00 |
500 - 700 | R$ 219,52 | R$ 10.976,00 |
750+ | R$ 217,15 | R$ 10.857,50 |
Documentos Técnicos
Especificações
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Length
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Height
16.51mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
País de Origem
Philippines
Detalhes do produto