Toshiba 2SK208-R(TE85L,F) N-Channel JFET, 10 V, Idss 0.3 to 0.75mA, 3-Pin SOT-346 (SC-59)
Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Idss Drain-Source Cut-off Current
0.3 to 0.75mA
Maximum Drain Source Voltage
10 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
-50V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-346 (SC-59)
Pin Count
3
Dimensions
2.9 x 1.5 x 1.1mm
Height
1.1mm
Width
1.5mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+125 °C
Length
2.9mm
Detalhes do produto
N-channel JFET, Toshiba
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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P.O.A.
Embalagem de Produção (Bobina)
10
P.O.A.
Embalagem de Produção (Bobina)
10
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Idss Drain-Source Cut-off Current
0.3 to 0.75mA
Maximum Drain Source Voltage
10 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
-50V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-346 (SC-59)
Pin Count
3
Dimensions
2.9 x 1.5 x 1.1mm
Height
1.1mm
Width
1.5mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+125 °C
Length
2.9mm
Detalhes do produto
N-channel JFET, Toshiba
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products