Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Height
15.1mm
País de Origem
China
Detalhes do produto
MOSFET Transistors, Toshiba
R$ 224,95
R$ 44,99 Each (In a Pack of 5) (Sem VAT)
Padrão
5
R$ 224,95
R$ 44,99 Each (In a Pack of 5) (Sem VAT)
Padrão
5
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Quantidade | Preço unitário | Per Pacote |
---|---|---|
5 - 20 | R$ 44,99 | R$ 224,95 |
25 - 45 | R$ 36,66 | R$ 183,30 |
50 - 120 | R$ 33,88 | R$ 169,40 |
125 - 245 | R$ 31,54 | R$ 157,70 |
250+ | R$ 28,70 | R$ 143,50 |
Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Height
15.1mm
País de Origem
China
Detalhes do produto