Toshiba TK N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 TK12E60W,S1VX(S

Nº de Estoque RS: 827-6113Marca: ToshibaPart Number: TK12E60W,S1VX(S
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Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

11.5 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Width

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.16mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Height

15.1mm

País de Origem

China

Detalhes do produto

MOSFET Transistors, Toshiba

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Informações de estoque temporariamente indisponíveis.

R$ 224,95

R$ 44,99 Each (In a Pack of 5) (Sem VAT)

Toshiba TK N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 TK12E60W,S1VX(S
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R$ 224,95

R$ 44,99 Each (In a Pack of 5) (Sem VAT)

Toshiba TK N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 TK12E60W,S1VX(S
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

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QuantidadePreço unitárioPer Pacote
5 - 20R$ 44,99R$ 224,95
25 - 45R$ 36,66R$ 183,30
50 - 120R$ 33,88R$ 169,40
125 - 245R$ 31,54R$ 157,70
250+R$ 28,70R$ 143,50

Ideate. Create. Collaborate

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No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

11.5 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Width

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.16mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Height

15.1mm

País de Origem

China

Detalhes do produto

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more