Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
99 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.5mm
Typical Gate Charge @ Vgs
105 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20mm
País de Origem
Japan
Detalhes do produto
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
R$ 53,76
R$ 53,76 Each (Sem VAT)
1
R$ 53,76
R$ 53,76 Each (Sem VAT)
1
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Quantidade | Preço unitário |
---|---|
1 - 9 | R$ 53,76 |
10 - 19 | R$ 35,63 |
20 - 39 | R$ 35,22 |
40 - 79 | R$ 34,81 |
80+ | R$ 34,15 |
Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
99 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.5mm
Typical Gate Charge @ Vgs
105 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20mm
País de Origem
Japan
Detalhes do produto