Toshiba TK N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-3PN TK31J60W5,S1VQ(O

Nº de Estoque RS: 896-2331Marca: ToshibaPart Number: TK31J60W5,S1VQ(O
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Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

TO-3PN

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

99 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

230 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.5mm

Typical Gate Charge @ Vgs

105 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

20mm

País de Origem

Japan

Detalhes do produto

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

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Informações de estoque temporariamente indisponíveis.

R$ 53,76

R$ 53,76 Each (Sem VAT)

Toshiba TK N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-3PN TK31J60W5,S1VQ(O

R$ 53,76

R$ 53,76 Each (Sem VAT)

Toshiba TK N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-3PN TK31J60W5,S1VQ(O
Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

QuantidadePreço unitário
1 - 9R$ 53,76
10 - 19R$ 35,63
20 - 39R$ 35,22
40 - 79R$ 34,81
80+R$ 34,15

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

TO-3PN

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

99 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

230 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.5mm

Typical Gate Charge @ Vgs

105 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

20mm

País de Origem

Japan

Detalhes do produto

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more